| 1. | Graded doping is adopted in both sides of the junction ( double graded doping ) . this results in a strong ( drift ) electric field throughout the whole active layer . this field will accumulate minority carriers effectively and the whole internal quantum efficiency is increased
漂移场的形成是通过mbe技术,在结的两侧都采用梯度掺杂(即双梯度掺杂) ,从而在整个有源层都建立起一个强的(漂移)电场,有效地利用载流子在电场作用下的漂移作用收集少数载流子,使得总内量子效率得以提高。 |
